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The Venue of poster sessions are either Oasis, Building 8 or 7F A-building.
Symposium : D-4 : Fabrication of Thin Films
Entry No Presentation Date Award Presenter Name Affiliation Paper Title
Aug. 2615:20 - 17:00Building 8, 1F Oasis
Aug. 2615:20 - 17:00Core time: 15:20-17:00
2041   D4-P26-001 Aug. 26  *M Manseok PARK Graduate School of NID Fusion Technology, Seoul National University of Science and Technology Surface plasma treatment of Cu interconnect for Cu bonding in 3D integration and their characteristics
3208   D4-P26-002 Aug. 26  *M Jisuk PARK Department of Materials Science and Engineering, Yonsei University Improving the conductivity and transmittance of Ag nanowire-based transparent electrode by laser treatment
3306   D4-P26-003 Aug. 26  *M Yusuke KIMURA Konan University Fabrication of Silver Patterns on Polyimide Films Based on Electrochemical Constructive Lithography Using Ion-Exchangeable Precursor Layers
2985   D4-P26-004 Aug. 26  Kai Hsiang CHANG Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan The tribological properties of the DLC coatings using a CFUBM sputtering system with various pulsed-DC power frequencies
2060   D4-P26-005 Aug. 26  Bonggeun CHOI 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Korea The Effects of nitrogen and annealing on the electrical and tribological properties of the DLC films deposited by RF-PECVD system
2446   D4-P26-006 Aug. 26  *D Tomohiro YAMADA Kyushu institute of technology,Kyushu Polytechnic College Evaluation of friction coefficient of silicon carbon nitride films
3435   D4-P26-007 Aug. 26  Du-Cheng TSAI National Chung Hsing University Oxidation resistance and characterization of (AlCrMoTaTi)-Six-N coating deposited via magnetron sputtering
2516   D4-P26-008 Aug. 26  Jae-In JEONG Research Institute of Industrial Science & Technology Structure and Property of Titanium Nitride Film Prepared by Oblique Angle Deposition
2113   D4-P26-009 Aug. 26  *D Bing-Hau KUO Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan Effect of various annealing temperatures on structural and electric properties of ZnO: (Ga, Ti) thin films
2461   D4-P26-010 Aug. 26  *M C. K CHANG Dept. of Materials Eng., Ming Chi University of Tech. Preparation and characterization of Gallium-Doped Zinc Oxide (GZO) Thin Films Prepared by Ion-Beam-Assisted Deposition (IBAD)
2138   D4-P26-011 Aug. 26  Tae Ho LEE College of Information and Communication Engineering, Sungkyunkwan University The effect of oxygen vacancy on instabilities and electrical properties of amorphous In-Ga-Zn-O
2316   D4-P26-012 Aug. 26  Yoshinobu MATSUDA Graduate School of Engineering, Nagasaki University Room Temperature Deposition of High Quality Al-doped ZnO Films on Vertically Aligned Substrates Using Off-Axis RF Magnetron Sputtering
3348   D4-P26-013 Aug. 26  *D Zurita ZULKIFLI Nagoya Institute of Technology,Faculty of Electrical Engineering, Universiti Teknologi Mara The emission performance of C:ZnO conical structure field emitters for transparent field emission display
3707   D4-P26-014 Aug. 26  *M Joongwon KIM Department of Materials Science and Engineering, Research Institute of Advanced Materials(RIAM), Seoul National University, Seoul 151-744, Korea Thickness dependency of the optical and electrical properties of Al-doped ZnO films deposited by the RF sputtering method
3325   D4-P26-015 Aug. 26  Hanki KIM Kyung Hee University Transparent MoO3 Intergraded IZO electrodes for use as a transparent anode in organic solar cells
3043   D4-P26-016 Aug. 26  Takuya OHASHI Department of Electronics and Materials Science, Shizuoka University Preparation of FTO thin film by microwave heating method
2455   D4-P26-018 Aug. 26  Akio SAYANO Toshiba Corp. Occurrence of hexavalent chromium oxide in the contact face between metal and insulating material and a technique for its suppression
3326   D4-P26-019 Aug. 26  Hanki KIM Kyung Hee university Effect of Rapid Thermal Annealing on the Ti doped In2O3 films grown by Linear Facing Target Sputtering
3799   D4-P26-020 Aug. 26  Wei-Chun CHEN Instrument Technology Research Center, National Applied Research Laboratories Effect of In/N flow ratios on InN/oxide layer by RF-MOMBE
2924   D4-P26-021 Aug. 26  Masami MESUDA Tokyo Research Laboratory, TOSOH corporation Property of GaN thin film using poly-crystal GaN sputtering target
3114   D4-P26-022 Aug. 26  *G Rajanish TIWARI Dept. of Electrical and Electronic, Saga University, Japan Direct Growth of Graphene from PMMA at Low Temperatures
2055   D4-P26-023 Aug. 26  DooJin CHOI Department of Material Science and Engineering, Yonsei University Investigation of the Plasma Sheath Effect on Plasma-Enhanced Atomic Vapor Deposition of SbTe Films in the Trench Structure
2318   D4-P26-024 Aug. 26  Yoshinobu MATSUDA Graduate School of Engineering, Nagasaki University Gas Temperature Measurement in ICP-Assisted DC Magnetron Discharge by Tunable Diode Laser Absorption Spectroscopy
3763   D4-P26-025 Aug. 26  Chun-Chi LIN Tatung University Hysterical Switching Behavior of VO2/CuO Thin film Heterojunction
3812   D4-P26-026 Aug. 26  *B Jihoon KIM Kongju National Univ, advance material engineering, hybrid materials devices lab Preparation of Invisible Metal-Grid Transparent Electrodes by Electrohydrodynamic Printing and Its Application to Optoelectronic Devices
2471   D4-P26-027 Aug. 26  Kaoru MIZUNO School of Science and Engineering, Graduate School of Shimane University Strain relaxation mechanism in GaAs/Si hetero-epitaxial thin film grown from nano-wire crystals
2460   D4-P26-028 Aug. 26  *M H. C. LIN Dept. of Materials Eng., Ming Chi University of Tech. Effects of various H2/SiH4 ratios on the characteristics of plasma generated by ICP-CVD and the properties of nc-Si:H thin films
2622   D4-P26-029 Aug. 26  Hyunkyu LEE School of Mechanical Engineering, Korea University of Technology and Education, Republic of Korea Hybrid Analysis of Polymer Processing in Injection Molding for Large Plate with Micro Optical V-groove Patterns
2656   D4-P26-030 Aug. 26  Shingo ONO Nagoya Institute of Technology Filterless Vacuum Ultraviolet Photoconductive Detector Based on YF3 Thin Film Prepared by Pulsed Laser Deposition
3410   D4-P26-031 Aug. 26  *D Dinah PUNNOOSE Pusan National University Design of highly efficient counter electrode using Quantum Dot Sensitized Solar Cel
3387   D4-P26-032 Aug. 26  *D Huan-Hsin SUNG National Chung Hsing University Fabrication and effect of MoSe2 application for CIGS absorber layer
3351   D4-P26-033 Aug. 26  *M Chandu V.V.M.GOPI Pusan National University Nickel Sulfide as Highly Efficient Counter Electrode in Dye-Sensitized and Quantum-dot Sensitized Solar Cells