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Symposium : D-5 : Control of Interfaces and Materials Processing for Nanoelectronics
Entry No Keynote/
Presentation Date Time to
Time to
Award Presenter Name Affiliation Paper Title
Aug. 2513:25 - 15:00Room A609, A-Building
Chair : Hitoshi TABATA, The University of Tokyo  
   Openning Address Aug. 25 13:25 13:30 Seiichi Miyazaki, Nagoya University
2919   Keynote   D5-K25-001 Aug. 25 13:30 14:15 D. D. SARMA Indian Institute of Science, Bangalore Probing buried layers and interfaces with high energy photoemission spectroscopy
3845   Invited   D5-I25-002 Aug. 25 14:15 14:45 *G ARIANDO NUSNNI-NanoCore & Department of Physics, National University of Singapore, Singapore Two dimensional electron gases at complex oxide interfaces
3426     D5-O25-003 Aug. 25 14:45 15:00 *D Hiroyasu YAMAHARA Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo Magnetic and Electrical Fluctuation “Yuragi” Properties of Magnetite base Spin-glass (Mg,Ti,Fe)3O4 Thin Films
Aug. 2515:20 - 16:20Room A609, A-Building
Chair : Seiichi MIYAZAKI, Nagoya University  
2791   Invited   D5-I25-004 Aug. 25 15:20 15:50 Yoshihito TANAKA University of Hyogo Time-resolved X-ray Diffraction for Phase Change Materials
2201   Invited   D5-I25-005 Aug. 25 15:50 16:20 Cheol Seong HWANG Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University Self-rectifying resistance switching materials for cross-bar array
Aug. 2516:30 - 17:45Room A609, A-Building
Chair : Hitoshi TABATA, The University of Tokyo  
2994   Invited   D5-I25-006 Aug. 25 16:30 17:00 HYUNSANG HWANG Pohang Univ. of Science & Technology (POSTECH) Insulator-metal transition (I-M-T) materials (VO2, NbO2, and Ti2O3) based threshold selector device for cross-point ReRAM
3040     D5-O25-008 Aug. 25 17:00 17:15 Akio OHTA Venture Business Laboratory, Nagoya University Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes
3784     D5-O25-009 Aug. 25 17:15 17:30 *M Hiroki SHIRAKAWA Univesity of Tsukuba Guiding Principles toward MONOS Type Archive Memory with Long Lifespan
Aug. 269:00 - 10:15Room A609, A-Building
Chair : Seiichi MIYAZAKI, Nagoya University  
3120   Keynote   D5-K26-001 Aug. 26 09:00 09:45 Kunji CHEN Nanjing University Si-based Materials and Processing for Nanoelectronic Devices
3097   Invited   D5-I26-002 Aug. 26 09:45 10:15 Deren YANG Zhejiang University Growth and Defect Characterization of Si-based Materials for light emitting
Aug. 2613:30 - 15:00Room A609, A-Building
Chair : Akira SAKAI, Osaka University  
3768     D5-O26-003 Aug. 26 13:30 13:45 *D Naofumi UENO Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University Epitaxial Growth of Si/Strained Si1-xGex Heterostructure on Si(100) by ECR Ar Plasma CVD without Substrate Heating
3396     D5-O26-004 Aug. 26 13:45 14:00 *M Takuma OHMURA Graduate School of Engineering, Nagoya University Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators
2310     D5-O26-005 Aug. 26 14:00 14:15 Yuki KAI kyushu university Formation of Large Grain Ge on Insulator Structure by Liquid-Solid Coexisting Annealing of a-GeSn
3379     D5-O26-006 Aug. 26 14:15 14:30 Nobuyoshi KOSHIDA Graduate School of Eng., Tokyo University of Agri. & Tech. Deposition of Thin Si, Ge, and SiGe Films by Ballistic Electro-Reduction
3805     D5-O26-007 Aug. 26 14:30 14:45 Tatsuya OKADA University of the Ryukyus High Quality SiO2 Films Deposited by RF Sputtering at Room Temperature for TFTs
3920     D5-O26-008 Aug. 26 14:45 15:00 Mitsuhisa IKEDA Graduate School of Advanced Sciences of Matter, Hiroshima University Characterization of Photoinduced Charge Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures
Aug. 279:00 - 10:15Room A609, A-Building
Chair : Jun XU, Nanjing University  
2736   Invited   D5-I27-001 Aug. 27 09:00 09:30 Takashi NAKAYAMA Department of Physics, Chiba University Physics of Metal/Ge Interfaces; Fermi-level Unpinning and Interface Disorders
3137   Invited   D5-I27-002 Aug. 27 09:30 10:00 Kee Joo CHANG Korea Advanced Institute of Science and Technology First-principles calculations toward understanding dopant segregation and Schottky barrier formation at semiconductor-oxide and metal-oxide interfaces in CMOS devices
3111     D5-O27-003 Aug. 27 10:00 10:15 Adil MUKHTAROV Institute of nuclear physics,National University of Uzbekistan Vacancy-related defects in nano-Si by tight-binding molecular dynamic simulation
Aug. 2710:30 - 12:00Room A609, A-Building
Chair : Akira Sakai, Osaka University  
2700     D5-O27-004 Aug. 27 10:30 10:45 Hiroshi TOCHIHARA Department of Electronics Engineering and Computer Science, Fukuoka University Scanning Tunneling Microcopy Studies of Epitaxial Silica Monolayers on C- and Si-Faces of Hexagonal SiC Basal Planes
2754     D5-O27-005 Aug. 27 10:45 11:00 *G Joel MOLINA Electronics Department, National Institute of Astrophysics, Optics and Electronics Electrical Characteristics of Al/Al2O3/Al Stacked Structures Fabricated at 300°C on Glass.
   Break Aug. 27 11:00 11:15
3753     D5-O27-007 Aug. 27 11:15 11:30 Vipul SINGH Indian Institute of Technology Indore Effect of Pore Diameter and Polymerization time on Electrochemically Synthesized Polypyrrole Based Glucose Biosensors
3082     D5-O27-008 Aug. 27 11:30 11:45 Tingli MA Kyushu Institute of Technology Cylindrical TCO-Less dye-sensitized solar cells with back contact structure
3598     D5-O27-009 Aug. 27 11:45 12:00 Jinn P. CHU National Taiwan University of Science and Technology The use of thin film metallic glass as a diffusion barrier in Cu-Sn couples
   Closing Remarks Aug. 27 12:00 12:05 Akira SAKAI, Osaka University